MRF8S7170N FREESCALE [Freescale Semiconductor, Inc], MRF8S7170N Datasheet - Page 2

• Manufacturer Part Number: MRF8S7170N
• Description: RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

2
MRF8S7170NR3
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Functional Tests
Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V
Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
Per JESD22-A113, IPC/JEDEC J-STD-020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain-Source On-Voltage
Power Gain
Drain Efficiency
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
GS
= 70 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
(1)
DS
D
D
D
(In Freescale Test Fixture, 50 ohm system) V
GS
GS
= 355 μAdc)
= 1200 mAdc, Measured in Functional Test)
= 2.9 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Test Methodology
Frequency
Characteristic
728 MHz
748 MHz
768 MHz
Test Methodology
(T
A
= 25°C unless otherwise noted)
DD
= 28 Vdc, I
(dB)
19.7
19.5
19.4
G
ps
Symbol
V
Rating
V
V
ACPR
DD
I
I
I
DS(on)
DQ
PAR
GS(th)
GS(Q)
G
GSS
IRL
DSS
DSS
η
3
ps
D
= 28 Vdc, I
= 1200 mA, P
37.1
37.0
37.9
(%)
h
D
18.0
34.0
Min
DQ
Package Peak Temperature
1.5
2.3
0.1
5.7
—
—
—
—
—
out
= 1200 mA, P
Output PAR
= 50 W Avg., f = 748 MHz,
(dB)
6.2
6.1
6.1
-37.5
0.22
19.5
37.0
260
Typ
-24
2.3
3.1
6.1
—
—
—
1C (Minimum)
IV (Minimum)
A (Minimum)
out
Class
Freescale Semiconductor
= 50 W Avg.,
ACPR
(dBc)
-38.7
-37.5
-37.8
-35.0
Max
21.0
3.8
0.3
10
-9
—
—
1
1
3
RF Device Data
(continued)
μAdc
μAdc
μAdc
(dB)
Unit
Unit
Vdc
Vdc
Vdc
dBc
IRL
-13
-24
-16
dB
dB
dB
°C
%