MRF8S7170N FREESCALE [Freescale Semiconductor, Inc], MRF8S7170N Datasheet - Page 6

• Manufacturer Part Number: MRF8S7170N
• Description: RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

6
MRF8S7170NR3
0.0001
0.001
0.01
100
0.1
10
1
0
W-CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
1
Figure 7. CCDF W-CDMA IQ Magnitude
Clipping, Single-Carrier Test Signal
2
3
PEAK-T O-A VERAGE (dB)
Input Signal
4
22
20
18
16
14
12
10
22
20
18
16
14
12
10
Figure 5. Single-Carrier W-CDMA Power Gain, Drain
5
600
1
G
ACPR
η
V
Single-Carrier W-CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
D
ps
DD
Efficiency and ACPR versus Output Power
6
Figure 6. Broadband Frequency Response
V
P
I
= 28 Vdc, I
DQ
650
DD
in
728 MHz
= 0 dBm
= 1200 mA
= 28 Vdc
7
TYPICAL CHARACTERISTICS
P
700
W-CDMA TEST SIGNAL
out
DQ
8
, OUTPUT POWER (WATTS) AVG.
Gain
748 MHz
= 1200 mA
f, FREQUENCY (MHz)
750
9
10
IRL
10
768 MHz
800
728 MHz
728 MHz
748 MHz
768 MHz
850
748 MHz
-100
-10
-20
-30
-40
-50
-60
-70
-80
-90
10
768 MHz
0
-9
900
Figure 8. Single-Carrier W-CDMA Spectrum
-ACPR in 3.84 MHz
-7.2
100
Integrated BW
950
-5.4
300
1000
-3.6
72
60
48
36
24
12
0
0
-5
-10
-15
-20
-25
-30
f, FREQUENCY (MHz)
-1.8
Channel BW
3.84 MHz
0
0
-10
-20
-30
-40
-50
-60
Freescale Semiconductor
1.8
+ACPR in 3.84 MHz
3.6
Integrated BW
RF Device Data
5.4
7.2
9