MRF8S7170N FREESCALE [Freescale Semiconductor, Inc], MRF8S7170N Datasheet - Page 3

• Manufacturer Part Number: MRF8S7170N
• Description: RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
P
IMD Symmetry @ 160 W PEP, P
VBW Resonance Point
Gain Flatness in 40 MHz Bandwidth @ P
Gain Variation over Temperature
Output Power Variation over Temperature
out
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
(-30 °C to +85°C)
(-30 °C to +85°C)
@ 1 dB Compression Point, CW
`
30 dBc
Characteristic
out
where IMD Third Order
(T
out
A
= 25°C unless otherwise noted) (continued)
= 50 W Avg.
DD
= 28 Vdc, I
Symbol
VBW
IMD
ΔP1dB
P1dB
G
ΔG
DQ
sym
F
res
= 1200 mA, 728-768 MHz Bandwidth
Min
—
—
—
—
—
—
0.0048
0.017
Typ
182
0.5
16
65
Max
—
—
—
—
—
—
MRF8S7170NR3
dBm/°C
dB/°C
MHz
MHz
Unit
dB
W
3