ap9479gm APEC, ap9479gm Datasheet - Page 4

• Manufacturer Part Number: ap9479gm
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: APEC

AP9479GM
0.01
100
0.1
10
15
12
30
20
10
1
9
6
3
0
0
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 11. Transfer Characteristics
Fig 9. Maximum Safe Operating Area
Single Pulse
V
T
DS
A
I
=25
D
=5V
= 5 A
V
Q
o
V
DS
C
1
G
GS
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
, Gate-to-Source Voltage (V)
10
2
V
T
V
DS
j
V
DS
=25
= 30 V
DS
= 38 V
= 48 V
o
10
C
20
4
100
T
100us
1ms
10ms
100ms
1s
DC
j
=150
o
C
1000
30
6
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.001
100
0.01
0.1
10
1
0.0001
Fig 8. Typical Capacitance Characteristics
1
4.5V
Fig 12. Gate Charge Waveform
V
G
Duty factor=0.5
0.001
0.02
0.01
0.05
0.1
5
0.2
Single Pulse
V
Q
DS
t , Pulse Width (s)
GS
0.01
9
, Drain-to-Source Voltage (V)
Q
Q
0.1
13
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
thja
10
21
= 125℃/W
j
= P
t
DM
f=1.0MHz
T
x R
100
25
thja
+ T
Q
C
C
C
a
iss
rss
oss
1000
29
4