ap9479gm APEC, ap9479gm Datasheet - Page 3

• Manufacturer Part Number: ap9479gm
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: APEC

30
20
10
0
55
50
45
40
35
6
4
2
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
0.2
V
j
V
Reverse Diode
V
=150
SD
GS
DS
4
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
o
T
C
0.4
2
A
= 25
o
C
0.6
6
0.8
4
I
T
T
D
A
8
= 3 A
j
=25
V
=25
G
=3.0V
1
℃
7.0 V
5.0V
4.5V
o
10V
C
1.2
10
6
1.8
1.4
1.0
0.6
30
20
10
1.6
1.2
0.8
0.4
0
-50
0
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
V
I
A
D
G
= 150
= 5 A
=10V
v.s. Junction Temperature
Junction Temperature
V
T
DS
T
0
j
0
o
j
C
, Junction Temperature (
, Drain-to-Source Voltage (V)
, Junction Temperature (
2
50
50
4
AP9479GM
100
100
o
o
C)
V
C)
G
=3.0V
7.0V
5.0V
4.5V
10V
6
150
150
3