HEF4011BT,653 NXP Semiconductors, HEF4011BT,653 Datasheet - Page 3

• Manufacturer Part Number: HEF4011BT,653
• Description: IC GATE NAND QUAD 2INPUT SO14
• Manufacturer: NXP Semiconductors
• Series: 4000Br

Specifications of HEF4011BT,653

• Number Of Circuits: 4
• Package / Case: 14-SOIC (3.9mm Width), 14-SOL
• Logic Type: NAND Gate
• Number Of Inputs: 2
• Current - Output High, Low: 2.4mA, 2.4mA
• Voltage - Supply: 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Product: NAND
• Logic Family: HEF4000
• High Level Output Current: - 3.6 mA
• Low Level Output Current: 3.6 mA
• Propagation Delay Time: 20 ns
• Supply Voltage (max): 15.5 V
• Supply Voltage (min): 3 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Logical Function: NAND
• Number Of Elements: 4
• Operating Supply Voltage (typ): 3.3/5/9/12V
• Operating Temp Range: -40C to 125C
• Package Type: SO
• Number Of Outputs: 1
• Technology: CMOS
• Mounting: Surface Mount
• Pin Count: 14
• Operating Temperature Classification: Automotive
• Quiescent Current: 1uA
• Operating Supply Voltage (max): 15V
• Operating Supply Voltage (min): 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933372640653; HEF4011BTD-T; HEF4011BTD-T

NXP Semiconductors
7. Functional description
Table 3.
[1]
8. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to V
[1]
[2]
9. Recommended operating conditions
Table 5.
HEF4011B
Product data sheet
Input
nA
L
L
H
H
Symbol
V
I
V
I
I
I
T
T
P
P
Symbol
V
V
T
t/V
IK
OK
I/O
DD
stg
amb
amb
DD
I
tot
DD
I
H = HIGH voltage level; L = LOW voltage level.
For DIP14 packages: above T
For SO14 packages: above T
Parameter
supply voltage
input clamping current
input voltage
output clamping current
input/output current
supply current
storage temperature
ambient temperature
total power dissipation
power dissipation
Function table
Limiting values
Recommended operating conditions
Parameter
supply voltage
input voltage
ambient temperature
input transition rise and fall rate
[1]
amb
amb
nB
L
H
L
H
= 70 C, P
= 70 C, P
All information provided in this document is subject to legal disclaimers.
tot
tot
derates linearly with 8 mW/K.
derates linearly with 12 mW/K.
Conditions
in free air
V
V
V
V
T
Conditions
V
per output
Rev. 4 — 30 March 2011
DD
DD
DD
amb
I
O
DIP14
SO14
< 0.5 V or V
< 0.5 V or V
= 5 V
= 10 V
= 15 V
= 40 C to + 125 C
H
H
H
L
Output
nY
I
O
> V
> V
DD
DD
+ 0.5 V
+ 0.5 V
Min
3
0
40
-
-
-
[1]
[2]
Min
0.5
-
0.5
-
-
-
65
40
-
-
-
Typ
-
-
-
-
-
-
Quad 2-input NAND gate
HEF4011B
SS
Max
V
+150
+125
= 0 V (ground).
Max
15
V
+125
3.75
0.5
0.08
+18
10
10
10
750
500
100
DD
© NXP B.V. 2011. All rights reserved.
50
DD
+ 0.5
Unit
V
V
C
s/V
s/V
s/V
Unit
V
mA
V
mA
mA
mA
C
C
mW
mW
mW
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