RF38F001000YBQ0 NUMONYX [Numonyx B.V], RF38F001000YBQ0 Datasheet - Page 18

• Manufacturer Part Number: RF38F001000YBQ0
• Description: Wireless Flash Memory (W18/W30 SCSP)
• Manufacturer: NUMONYX [Numonyx B.V]

6.0
6.1
Table 7:
Datasheet
18
Parameter
* Input leakage currents include Hi-Z output leakage for bi-directional buffers with tri-state
S-V
*I
I
V
V
V
*I
I
V
I
I
I
V
I
outputs.
CC2
DR
OH
CC
SB
OL
DR
OH
LDR
OL
IH
IL
IL
CC
SRAM DC Characteristics
Voltage Range
V
Operating Current at
min cycle time
Operating Current at
max cycle time (1 μs)
Standby Current
Current in Data
Retention mode
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Output HIGH Current
Output LOW Current
Input Leakage Current
Input Leakage Current
in Data Retention Mode
CC
Electrical Specifications
DC Characteristics
SRAM and PSRAM DC characteristics are shown in
Numonyx Wireless Flash Memory (W18) Datasheet (order number 290701) and the
Numonyx Wireless Flash Memory (W30) Datasheet (order number 290702) for flash DC
characteristics.
for Data Retention
Description
Address/Data toggling at
S-CS1# ≥ S-V
or S-CS2 ≤ V
minimum cycle time
-0.2 < V
-0.2 < V
S-V
S-V
1.8 V SRAM:
3.0 V SRAM:
I
I
IO
IO
Test Conditions
CC
CC
= 0 mA
= 0 mA
I
I
OH
S-V
OL
= 1.0 V
= 1.5 V
IN
IN
V
= -100 μA
= 100 μA,
SS
CC
< S-V
< S-V
CCMIN
CC
+0.2V
= V
-0.2V
CC
CC
DR
+ 0.2 V
+ 0.2 V
16M
16M
16M
16M
4M
8M
4M
8M
4M
8M
4M
8M
32WQ and 64WQ Family with Asynchronous RAM
32WQ and 64WQ Family with Asynchronous RAM
S-V
S-V
0.15
Min
-0.1
-0.2
1.7
1.0
0.4
-1
-1
Table 7
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1.8 V SRAM
CC
CC
-
-
S-V
Max
1.95
and
0.2
0.2
0.4
+1
+1
25
35
40
10
12
20
30
10
18
–
4
6
6
–
–
–
CC
+
Table
S-V
S-V
Order Number: 251407-13
-0.1
-0.2
Min
2.2
1.5
0.1
0.4
-1
-1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
3.0 V SRAM
CC
CC
8. Refer to the
-
-
S-V
November 2007
Max
3.3
0.1
0.2
0.6
+1
+1
45
50
55
10
10
15
15
25
45
12
15
–
5
–
–
–
CC
+
Unit
mA
mA
mA
mA
μA
μA
μA
μA
V
V
V
V
V
V