RF38F001000YBQ0 NUMONYX [Numonyx B.V], RF38F001000YBQ0 Datasheet - Page 26

• Manufacturer Part Number: RF38F001000YBQ0
• Description: Wireless Flash Memory (W18/W30 SCSP)
• Manufacturer: NUMONYX [Numonyx B.V]

Table 13: PSRAM AC Characteristics—Write (Sheet 2 of 2)
Figure 9:
Datasheet
26
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
W10
W5
W6
W7
W8
W9
R-UB#, R-LB#
#
ADDRESSES
See
A write occurs during the overlap (t
goes low with asserting R-UB# or R-LB# for single byte operation or simultaneously asserting R-UB# and R-LB# for
double byte operation. A write ends at the earliest transition when P-CS# goes high and R-WE# goes high.
t
t
t
going high.
W3 is 70 ns for continuous write operations over 50 times.
P-CE# must go high and be maintained high for a minimum of 10ns at least once every 8,000ns
Spec’s only applicable to parts 38F1030W0YxQF & 38F2030W0YxQF
Applicable to 38F2020W0ZTQ1, 38F2020W0ZBQ1, 38F2030W0YTQ1, 38F2030W0YBQ1, 38F2030W0ZTQ2,
38F2030W0ZBQ2, 38F1030W0ZTQ0, 38F1030W0ZBQ0.
WP
AS
WR
R-WE#
P-CS#
is measured from the address valid to the beginning of a write.
Symbol
DAT A
is measured from P-CS# going low to end of a write.
is measured from the end of a write to the address change. t
Figure 9, “AC Waveform PSRAM Write Operation”
t
AC Waveform PSRAM Write Operation
t
t
t
t
t
t
WPH
CEL
AW
CW
WR
BW
DH
1
Address Setup to R-WE#
(P-CS#) Going High
P-CS# (R-WE#) Setup to R-WE# (P-CS#)
Going High
Data Hold from R-WE#
(P-CS#) High
Write Recovery
R-UB#, R-LB# Setup to R-WE# (P-CS#) Going
High
P-CE# low-time restriction
Write High Pulse Width
Parameter
W2
WP
) of low P-CS# and low R-WE#. A write begins when P-CS# goes low and R-WE#
7
W5
W1
W1
W6
WR
32WQ and 64WQ Family with Asynchronous RAM
32WQ and 64WQ Family with Asynchronous RAM
W9
W3
W3
Min
.
applied in case a write ends as P-CS# or R-WE#
60
60
60
10
0
0
–
1.8 V
W4
8,000
Max
–
–
–
–
–
–
Data In
Min
60
60
60
0
0
–
–
3.0 V
Order Number: 251407-13
W8
Max
–
–
–
–
–
–
–
W7
November 2007
Unit
ns
ns
ns
ns
ns
ns
ns
Notes
7,8
5
8