RF38F001000YBQ0 NUMONYX [Numonyx B.V], RF38F001000YBQ0 Datasheet - Page 23

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RF38F001000YBQ0

Manufacturer Part Number
RF38F001000YBQ0
Description
Wireless Flash Memory (W18/W30 SCSP)
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet
32WQ and 64WQ Family with Asynchronous RAM
Table 11: PSRAM AC Characteristics (85ns or 88ns Initial Access) — Read Operations
November 2007
Order Number: 251407-13
Note:
1.
2.
3.
4.
5.
R10
R11
R12
PR1
PR2
R4
R5
R6
R7
R8
R9
#
At any given temperature and voltage condition, t
to device interconnection.
Sampled but not 100% tested.
Timings of t
referenced to output voltage levels.
4-Word Page read only available for 32-Mbit PSRAM. No page mode feature for 16-Mbit PSRAM.
Applicable to parts with 85ns or 88ns initial access time: 38F2030W0ZxQ1, 38F2040W0YxQ0, 38F2040W0ZxQ0,
28F2240WWYxQ0.
Symbol
t
t
t
t
t
t
t
t
t
t
OHZ
BHZ
t
OLZ
BLZ
OH
OE
BA
HZ
PC
PA
LZ
HZ
R-OE# to Output Delay
R-UB#, R-LB# to Output Delay
P-CS# to Output in Low-Z
R-OE# to Output in Low-Z
P-CS# to Output in High-Z
R-OE# to Output in High-Z
Output Hold (from Address, P-CS# or R-
OE# change, whichever occurs first)
R-UB#, R-LB# to Output in Low-Z
R-UB#, R-LB# to Output in High-Z
Page Cycle Time
Page Access Time
and t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not
Parameter
5
HZ
(Max) is less than t
Min
10
30
5
5
5
1.8 V
LZ
Max
65
88
25
25
25
30
(Max) both for a given device and from device
Min
10
40
0
0
0
0
0
0
3.0 V
Max
40
85
25
25
35
25
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Datasheet
Notes
1,2,3
1,2
2,3
2
2
2
4
4
23

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