DS2009SF47 DYNEX [Dynex Semiconductor], DS2009SF47 Datasheet - Page 5
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DS2009SF47
Manufacturer Part Number
DS2009SF47
Description
Rectifier Diode
Manufacturer
DYNEX [Dynex Semiconductor]
Datasheet
1.DS2009SF47.pdf
(7 pages)
www.dynexsemi.com
10000
1000
0.001
100
Fig.6 Maximum (limit) transient thermal impedance -
0.01
0.1
0.001
0.1
Conditions:
T
V
I
F
j
R
= 2000A
= 150˚C
= 100V
Rate of decay of on-state current, dI
Fig.4 Total stored charge
0.01
junction to case
1.0
Time - (s)
3 phase 120˚
6 phase 60˚
Conduction
Halfwave
0.1
d.c.
Effective thermal resistance
10
Double side
dI
Junction to case ˚C/W
Double side cooled
F
0.022
0.024
0.026
0.027
Anode side cooled
F
/dt
I
/dt - (A/µs)
F
1.0
Single side
I
RM
Q
0.038
0.040
0.042
0.043
S
100
10
30
25
20
15
10
Fig.5 Surge (non-repetitive) forward current vs time
5
0
1
ms
(with 50% V
I
2
t
10
Duration
1
RRM
2 3
at T
Cycles at 50Hz
case
5
150˚C)
10
I
2
DS2009SF
t = I
20
^
2
2
x t
50
1.4
1.3
1.2
1.1
1.0
0.9
0.8
5/7