16DR12M NELLSEMI [Nell Semiconductor Co., Ltd], 16DR12M Datasheet - Page 4

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16DR12M

Manufacturer Part Number
16DR12M
Description
Glass Passivated Standard Recovery Diodes (Stud Version), 16A
Manufacturer
NELLSEMI [Nell Semiconductor Co., Ltd]
Datasheet
SEMICONDUCTOR
Fig. 5 Maximum Non-Repetitive Surge Current
Fig.7 Maximum Non-Repetitive Surge Current
Number Of Equal Amplitude Half Cycle current Pulses(N)
325
300
275
250
225
200
175
150
125
350
325
300
275
250
225
200
175
150
125
0.01
1
ORDERING INFORMATION TABLE
16D(R)Series
16D(R)Series
Maximum Non Repetitive Surge Current
Device code
Rated V
At Any Rated Load Condition And With
Pulse Train Duration (S)
Versus Pulse Train Duration
RRM
Applied Following Surge.
0.1
Rated V
No Voltage Reapplied
10
Initial TJ = 175°C
Initial TJ = 175°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
RRM
1
2
3
5
4
16
Reapplied
1
-
-
-
-
-
D
100
2
Current rating: Code = I
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
D = Standard recovery device
M = Stud base DO-230AA (DO-4) M5 0.8 (not available
Voltage code
None = Stud base DO-203AA (DO-4) #10-32 UNF-2A
1
for avalanche diodes)
Page 4 of 5
R
3
×
12
4
100 = V
M
Fig.8 Thermal Impedance ZthJC Characteristics
5
F(AV)
RRM
Fig. 6 Forward Voltage Drop Characterisics
1000
100
0.1
10
10
(see Voltage Ratings table)
1
1
16D(R)Series
0.001
0
TJ = 25°C
N
RthJC = 1.6K/W
(DC Operation)
Steady State Value
Instantaneous Forward Voltage (V)
ell
Square Wave Pulse Duration (s)
1
×
0.01
High Power Products
2
0.1
3
16D(R)Series
16D(R)Series
4
TJ = 175°C
1
5
10
6
RoHS
RoHS

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