PSMN3R5-30LL_11 PHILIPS [NXP Semiconductors], PSMN3R5-30LL_11 Datasheet - Page 2

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PSMN3R5-30LL_11

Manufacturer Part Number
PSMN3R5-30LL_11
Description
N-channel DFN3333-8 30 V 3.6 m? logic level MOSFET
Manufacturer
PHILIPS [NXP Semiconductors]
Datasheet
NXP Semiconductors
Table 1.
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN3R5-30LL
Product data sheet
Symbol
Q
Avalanche ruggedness
E
Pin
1
2
3
4
5,6,7,8
mb
Type number
PSMN3R5-30LL
DS(AL)S
G(tot)
Symbol Description
S
S
S
G
D
D
Quick reference data
Pinning information
Ordering information
Parameter
total gate charge
non-repetitive drain-source
avalanche energy
source
source
source
gate
drain
mounting base; connected to drain
DFN3333-8
Package
Name
…continued
Description
plastic thermal enhanced very thin small outline package; no
leads; 8 terminals
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 December 2011
Conditions
V
see
V
see
V
I
R
D
GS
GS
GS
GS
= 40 A; V
Figure
Figure
= 4.5 V; I
= 10 V; I
= 10 V; T
= 50 Ω
N-channel DFN3333-8 30 V 3.6 mΩ logic level MOSFET
Simplified outline
14; see
14; see
sup
SOT873-1 (DFN3333-8)
D
D
j(init)
= 15 A; V
≤ 30 V; unclamped;
= 15 A; V
= 25 °C;
Figure 15
Figure 15
Transparent
8 7 6 5
1 2 3 4
top view
DS
DS
= 15 V;
= 15 V;
PSMN3R5-30LL
Min
-
-
-
Graphic symbol
Typ
18
37
-
mbb076
G
© NXP B.V. 2011. All rights reserved.
Max
-
-
118
Version
SOT873-1
D
S
Unit
nC
nC
mJ
2 of 15

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