PSMN3R5-30LL_11 PHILIPS [NXP Semiconductors], PSMN3R5-30LL_11 Datasheet - Page 7

• Manufacturer Part Number: PSMN3R5-30LL_11
• Description: N-channel DFN3333-8 30 V 3.6 m? logic level MOSFET
• Manufacturer: PHILIPS [NXP Semiconductors]

NXP Semiconductors
Table 6.
PSMN3R5-30LL
Product data sheet
Symbol
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
SD
r
(S)
g
100
fs
80
60
40
20
0
drain current; typical values
Forward transconductance as a function of
0
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
10
20
…continued
30
40
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003aae144
I
D
(A)
Rev. 4 — 12 December 2011
Conditions
V
R
I
see
I
V
50
S
S
DS
GS
G(ext)
= 10 A; V
= 15 A; dI
Figure 17
= 15 V; R
= 0 V; V
= 4.7 Ω; T
N-channel DFN3333-8 30 V 3.6 mΩ logic level MOSFET
GS
S
DS
/dt = 100 A/µs;
L
Fig 6.
= 0 V; T
= 1 Ω; V
= 15 V
j
= 25 °C
(A)
I
D
50
40
30
20
10
0
function of gate-source voltage; typical values
j
Transfer characteristics: drain current as a
0
= 25 °C;
GS
= 4.5 V;
1
PSMN3R5-30LL
T
j
= 150 °C
Min
-
-
-
-
-
-
-
2
Typ
23
54
35
18
0.85
37
34
T
j
= 25 °C
3
© NXP B.V. 2011. All rights reserved.
V
003aae143
GS
-
-
Max
-
-
-
1.2
-
(V)
4
Unit
ns
ns
ns
ns
V
ns
nC
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