PSMN3R5-30LL_11 PHILIPS [NXP Semiconductors], PSMN3R5-30LL_11 Datasheet - Page 3

• Manufacturer Part Number: PSMN3R5-30LL_11
• Description: N-channel DFN3333-8 30 V 3.6 m? logic level MOSFET
• Manufacturer: PHILIPS [NXP Semiconductors]

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN3R5-30LL
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
(A)
I
D
120
100
80
60
40
20
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
(1)
100
150
All information provided in this document is subject to legal disclaimers.
003aae139
T
mb
(°C)
Conditions
T
T
V
V
pulsed; t
T
T
pulsed; t
V
V
j
j
mb
mb
GS
GS
GS
sup
Rev. 4 — 12 December 2011
200
≥ 25 °C; T
≤ 150 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 30 V; unclamped; R
p
p
≤ 10 µs; T
≤ 10 µs; T
N-channel DFN3333-8 30 V 3.6 mΩ logic level MOSFET
j
≤ 150 °C
mb
mb
j(init)
j
≥ 25 °C; R
Fig 2.
= 100 °C; see
= 25 °C; see
Figure 2
= 25 °C; I
P
mb
mb
(%)
der
120
80
40
= 25 °C; see
= 25 °C
0
function of solder point temperature
Normalized total power dissipation as a
GS
0
GS
D
= 20 kΩ
= 40 A;
= 50 Ω
Figure 1
Figure 1
50
Figure 3
PSMN3R5-30LL
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
003aab937
mb
20
150
150
260
Max
30
30
40
40
423
71
40
423
118
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
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