PSMN3R5-30LL_11 PHILIPS [NXP Semiconductors], PSMN3R5-30LL_11 Datasheet - Page 5

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PSMN3R5-30LL_11

Manufacturer Part Number
PSMN3R5-30LL_11
Description
N-channel DFN3333-8 30 V 3.6 m? logic level MOSFET
Manufacturer
PHILIPS [NXP Semiconductors]
Datasheet
NXP Semiconductors
5. Thermal characteristics
Table 5.
[1]
PSMN3R5-30LL
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
R
temperature. In practice R
th(j-a)
10
10
10
−1
−2
1
10
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
is guaranteed by design and assumes that the device is mounted on a 40mm x 40mm x 70µm copper pad at 20°C ambient
−6
Thermal characteristics
single shot
0.1
0.05
δ = 0.5
0.02
0.2
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
10
th(j-a)
−5
will be determined by the customer’s PCB characteristics
All information provided in this document is subject to legal disclaimers.
10
−4
Rev. 4 — 12 December 2011
N-channel DFN3333-8 30 V 3.6 mΩ logic level MOSFET
10
−3
Conditions
see
Figure 4
10
−2
PSMN3R5-30LL
[1]
Min
-
-
10
P
−1
t
Typ
1
53
p
T
t
p
© NXP B.V. 2011. All rights reserved.
(s)
003aae141
δ =
Max
1.3
60
t
T
p
t
1
Unit
K/W
K/W
5 of 15

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