MTB09N03H8 CYSTEKEC [Cystech Electonics Corp.], MTB09N03H8 Datasheet - Page 2

• Manufacturer Part Number: MTB09N03H8
• Description: N-Channel Logic Level Enhancement Mode Power MOSFET
• Manufacturer: CYSTEKEC [Cystech Electonics Corp.]

Absolute Maximum Ratings
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Characteristics (T
100% UIS testing in condition of V
Static
MTB09N03H8
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, I
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
Operating Junction and Storage Temperature Range
Dynamic
Note : 1. Pulse width limited by maximum junction temperature
R
Symbol
BV
V
I
DS(ON)
Coss
Crss
G
Ciss
I
I
D(ON)
GS(th)
GSS
DSS
FS
DSS
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
*1
*1
*1
Min.
1.0
30
50
-
-
-
-
-
-
-
-
-
C
=25°C, unless otherwise specified)
Parameter
CYStech Electronics Corp.
D
2020
=15V, L=0.1mH, V
Typ.
160
275
1.7
C
C
20
15
8
=25°C
=100°C
-
-
-
-
-
D
=53A, R
(Ta=25°C)
T
T
C
C
=25℃
=100℃
Max.
± 100
3.0
9.5
25
19
G
1
-
-
-
-
-
-
=25Ω
G
=10V, I
Unit
m Ω
m Ω
L
nA
μA
A
pF
=25A, Rated V
V
V
S
Test Conditions
V
V
V
V
V
V
V
V
V
V
Tj, Tstg
Symbol
Symbol
GS
DS
DS
GS
DS
DS
DS
GS
GS
GS
R
R
V
E
E
I
I
V
P
=0, I
= ± 20
=0V, V
I
DM
DS
th,j-c
th,j-a
AS
= V
=5V, I
=24V, V
=20V, V
=10V, V
=10V, I
=4.5V, I
AR
AS
DS
D
D
GS
=25V N-CH
GS
D
=250μA
, I
D
DS
=20A
D
D
D
GS
GS
GS
=25A
=15V, f=1MHz
=250μA
=20A
=0
=0, Tj=125°C
=10V
-55~+175
Limits
Value
CYStek Product Specification
Spec. No. : C709H8
Issued Date : 2009.05.07
Revised Date :
Page No. : 2/6
37.5
±20
2.5
140
15
50
30
50
35
70
60
32
*2
*3
*1
°C/W
°C/W
Unit
Unit
mJ
°C
W
V
A