MTB09N03H8 CYSTEKEC [Cystech Electonics Corp.], MTB09N03H8 Datasheet - Page 3

• Manufacturer Part Number: MTB09N03H8
• Description: N-Channel Logic Level Enhancement Mode Power MOSFET
• Manufacturer: CYSTEKEC [Cystech Electonics Corp.]

Characteristics (T
Source-Drain Diode
Recommended Soldering Footprint
Qg (V
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Qg (V
MTB09N03H8
t
Qgd
Qgs
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
tr
d(OFF)
t
GS
Symbol
GS
d(ON)
V
I
I
SM
=4.5V)
t
S
Qrr
=10V)
Rg
SD
f
trr
*1, 2
*1
*1, 2
*3
*1
*1, 2
*1, 2
*1, 2
*1, 2
*1, 2
*1, 2
C
=25°C, unless otherwise specified)
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
CYStech Electronics Corp.
Typ.
4.7
7.4
1.7
23
13
10
30
22
12
8
5
-
-
-
Max.
140
1.3
50
-
-
-
-
-
-
-
-
-
-
-
unit : mm
Unit
nC
nC
Ω
ns
ns
V
A
V
V
R
V
I
I
F
F
Test Conditions
GS
=I
=I
DS
DS
GS
=2.7Ω
=15V, V
=15V, I
=15mV, V
S
S
, V
, dI
GS
F
/dt=100A/μs
=0V
D
GS
=20A, V
DS
=10V, I
=0V, f=1MHz
CYStek Product Specification
Spec. No. : C709H8
Issued Date : 2009.05.07
Revised Date :
Page No. : 3/6
GS
D
=25A
=10V,