pbss9110t NXP Semiconductors, pbss9110t Datasheet - Page 4

• Manufacturer Part Number: pbss9110t
• Description: 100 V, 1 A Pnp Low Vcesat Biss Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and 1 cm
2004 May 13
R
SYMBOL
th(j-a)
100 V, 1 A
PNP low V
Mounted on printed-circuit board; 1 cm
(1)
(2)
(K/W)
Z
10
th
10
10
10
= 1.
= 0.75.
1
3
2
1
10
(10)
5
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
thermal resistance from junction to
ambient
CEsat (BISS)
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
(3)
(4)
10
4
PARAMETER
= 0.5.
= 0.33.
2
10
collector mounting pad.
transistor
3
(5)
(6)
= 0.2.
= 0.1.
10
2
in free air; note 1
in free air; note 2
(7)
(8)
10
4
= 0.05.
= 0.02.
1
CONDITIONS
1
(9)
(10) = 0.
= 0.01.
10
2
collector mounting pad.
VALUE
417
260
10
2
PBSS9110T
Product specification
t
p
001aaa814
(s)
10
UNIT
K/W
K/W
3