pbss9110t NXP Semiconductors, pbss9110t Datasheet - Page 6

• Manufacturer Part Number: pbss9110t
• Description: 100 V, 1 A Pnp Low Vcesat Biss Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 May 13
I
I
I
h
V
R
V
V
f
C
SYMBOL
j
CBO
CES
EBO
T
FE
CEsat
BEsat
BEon
= 25 C unless otherwise specified.
CEsat
c
100 V, 1 A
PNP low V
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
CEsat (BISS)
300 s;
PARAMETER
0.02.
transistor
V
V
V
V
V
V
V
V
I
I
I
I
V
V
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CE
CE
CE
CE
CB
= 250 mA; I
= 500 mA; I
= 1 A; I
= 1 A; I
= 1 A; I
= 4 V; I
= 80 V; I
= 80 V; I
= 80 V; V
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
= 10 V; I
6
CONDITIONS
B
B
B
C
= 100 mA; note 1
= 100 mA; note 1
= 100 mA
C
C
C
C
C
E
E
C
E
= 0 A
= 1 mA
= 250 mA
= 500 mA; note 1
= 1 A; note 1
= 1 A
BE
B
B
= 0 A
= 0 A; T
= 50 mA;
= I
= 25 mA
= 50 mA
= 0 A
e
= 0 A;
j
= 150 C
150
150
150
125
100
MIN.
170
TYP.
PBSS9110T
Product specification
450
320
17
MAX.
100
50
100
100
120
180
320
1.1
1
nA
nA
nA
mV
mV
mV
m
V
V
MHz
pF
UNIT
A