blf861 NXP Semiconductors, blf861 Datasheet - Page 2

• Manufacturer Part Number: blf861
• Description: Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.
QUICK REFERENCE DATA
RF performance at T
Note
1. Sync compression: input sync
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2000 May 23
V
V
I
P
T
T
D
SYMBOL
stg
j
High power gain
Easy power control
Excellent ruggedness
Source on underside eliminates DC isolators; reducing
common mode inductance
Designed for broadband operation (UHF band)
Internal input and output matching for high gain and
optimum broadband operation.
Communication transmitter applications in the UHF
frequency range.
DS
GS
tot
UHF power LDMOS transistor
MODE OF OPERATION
PAL BG (TV); class-AB
CW, class-AB
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
h
= 25 C in a common source 860 MHz test circuit.
PARAMETER
860 (ch 69)
(MHz)
33%; output sync 27%.
860
f
V
(V)
T
32
32
DS
mb
25 C
2
CONDITIONS
PINNING - SOT540A
(peak sync)
typ. 170
>150
150
(W)
P
PIN
L
1
2
3
4
5
Top view
Fig.1 Simplified outline.
typ. 14.5
>13.5
drain 1
drain 2
gate 1
gate 2
source connected to flange
(dB)
>14
G
p
3
1
65
MIN.
DESCRIPTION
2
4
>50
>40
(%)
Product specification
MBK777
D
65
18
318
+150
200
15
MAX.
5
BLF861
note 1
V
V
A
W
(dB)
C
C
UNIT
G
1
p