blf861 NXP Semiconductors, blf861 Datasheet - Page 3

• Manufacturer Part Number: blf861
• Description: Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
Note
1. Capacitance values without internal matching.
2000 May 23
R
R
V
V
I
I
I
g
R
C
C
C
j
DSS
DSX
GSS
handbook, halfpage
fs
SYMBOL
SYMBOL
(BR)DSS
GSth
th j-mb
th mb-h
= 25 C; per section; unless otherwise specified.
DSon
iss
oss
rss
UHF power LDMOS transistor
V
Fig.2
GS
(pF)
C os
200
160
120
= 0; f = 1 MHz; T
80
40
0
0
Output capacitance as a function of
drain-source voltage; typical values per
section.
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
10
j
= 25 C.
PARAMETER
20
30
PARAMETER
40
V DS (V)
MCD870
50
V
V
V
V
V
V
V
V
V
V
GS
DS
GS
GS
GS
DS
GS
GS
GS
GS
= 0; I
= 10 V; I
= 0; V
= V
= 15 V; V
= 10 V; I
= V
= 0; V
= 0; V
= 0; V
GSth
GSth
3
D
CONDITIONS
DS
DS
DS
DS
= 1.5 mA
+ 9 V; V
+ 9 V; I
D
D
= 32 V
= 32 V; f = 1 MHz
= 32 V; f = 1 MHz
= 32 V; f = 1 MHz
= 150 mA
= 4 A
DS
T
= 0
mb
D
DS
= 4 A
= 25 C; P
= 10 V
CONDITIONS
(1)
(1)
(1)
tot
= 318 W
65
4
18
MIN.
4
170
84
42
6
TYP.
Product specification
VALUE
0.55
0.2
5
2.2
25
MAX.
BLF861
UNIT
K/W
K/W
V
V
A
nA
S
m
pF
pF
pF
UNIT
A