blf861 NXP Semiconductors, blf861 Datasheet - Page 5

• Manufacturer Part Number: blf861
• Description: Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2000 May 23
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
T
2-tone: f
measured in 860 MHz test circuit.
Fig.5
T
measured in 860 MHz test circuit.
Fig.7
h
h
(dB)
= 25 C; V
= 25 C; V
G p
(dB)
G p
20
16
12
20
16
12
8
4
8
4
0
0
1
= 860 MHz ( 6 dB); f
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
Power gain and drain efficiency as functions
of load power; typical values.
DS
DS
= 32 V; I
= 32 V; I
40
100
DQ
DQ
G p
D
= 1 A.
= 1 A; CW, class-AB; f = 860 MHz;
80
2
= 860.1 MHz ( 6 dB)
120
200
G p
P L (PEP) (W)
D
160
P L (W)
MLD359
MLD361
300
200
80
60
40
20
0
80
60
40
20
0
(%)
(%)
D
D
5
handbook, halfpage
T
2-tone: f
measured in 860 MHz test circuit.
Fig.6
h
(dBc)
d im
= 25 C; V
20
40
60
80
0
0
1
= 860 MHz ( 6 dB); f
Intermodulation distortion as a function of
peak envelope output power; typical values.
DS
= 32 V; I
100
DQ
= 1 A.
2
= 860.1 MHz ( 6 dB)
d 3
d 5
200
Product specification
P L (PEP) (W)
BLF861
MLD360
300