blf861 NXP Semiconductors, blf861 Datasheet - Page 4

• Manufacturer Part Number: blf861
• Description: Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
APPLICATION INFORMATION
RF performance in a common source 860 MHz test circuit. T
Note
1. Sync compression: input sync
Ruggedness in class-AB operation
The BLF861 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
2000 May 23
handbook, halfpage
PAL BG (TV); class-AB
UHF power LDMOS transistor
CW, class-AB operation; V
P
Fig.3
2-tone; class-AB
L
CW; class-AB
= 170 W (total device); T
OPERATION
( )
Z i
12
MODE OF
8
4
0
400
Input impedance as a function of frequency
(series components); typical push-pull
values.
500
DS
DS
600
h
= 32 V; f = 860 MHz at rated load power.
= 25 C.
= 32 V; I
f
1
f
(ch 69)
1
(MHz)
= 860.1
860
860
= 860
f
700
DQ
x i
r i
= 1 A;
33%; output sync 27% measured in 860 MHz test circuit.
800
V
(V)
32
32
32
f (MHz)
DS
MCD871
900
I
(A)
DQ
1
1
1
4
h
(peak sync)
150 (PEP)
= 25 C; R
handbook, halfpage
typ. 170
> 150
150
Fig.4
(W)
CW, class-AB operation; V
P
P
L
L
= 170 W (total device); T
( )
Z L
10
5
0
5
400
Load impedance as a function of frequency
(series components); typical push-pull
values.
th mb-h
typ. 14.5
>13.5
(dB)
500
>14
>14
G
= 0.15 K/W; unless otherwise specified.
p
DS
600
h
= 25 C.
= 32 V; I
>50
>40
>40
(%)
D
R L
X L
700
DQ
= 1 A;
Product specification
typ. 30
(dBc)
d
800
Im
28
f (MHz)
BLF861
MCD872
900
note 1
(dB)
G
1
p