N02L6181AB27IT ONSEMI [ON Semiconductor], N02L6181AB27IT Datasheet

N02L6181AB27IT

Manufacturer Part Number

N02L6181AB27IT

Description

2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit

Manufacturer

ONSEMI [ON Semiconductor]

Datasheet

1.N02L6181AB27IT.pdf (11 pages)

Current page: 1 of 11
Download datasheet (637Kb)

July 2008 - Rev. 4

2Mb Ultra-Low Power Asynchronous CMOS SRAM

128Kx16 bit

Overview

The N02L6181A is an integrated memory device

containing a 2 Mbit Static Random Access Memory

organized as 131,072 words by 16 bits. The device

is designed and fabricated using ON

Semiconductor’s advanced CMOS technology to

provide both high-speed performance and ultra-low

power. The base design is the same as ON

Semiconductor’s N02L63W3A, which is processed

to operate at higher voltages. The device operates

with a single chip enable (CE) control and output

enable (OE) to allow for easy memory expansion.

Byte controls (UB and LB) allow the upper and

lower bytes to be accessed independently. The

N02L6181A is optimal for various applications

where low-power is critical such as battery backup

and hand-held devices. The device can operate

over a very wide temperature range of -40

+85

packages compatible with other standard 128Kb x

16 SRAMs.

Product Family

N02L6181AB2

Part Number

N02L6181AB

C and is available in JEDEC standard

Package Type

Green 48-BGA

48 - BGA

-40

Temperature

Operating

C to +85

C to

C 1.65V - 2.2V

Supply

Power

(Vcc)

Features

• Single Wide Power Supply Range

• Very low standby current

• Very low operating current

• Very low Page Mode operating current

• Simple memory control

• Low voltage data retention

• Very fast output enable access time

• Automatic power down to standby mode

• TTL compatible three-state output driver

• Compact space saving BGA package

1.65 to 2.2 Volts

0.5µA at 1.8V (Typical)

1.4mA at 1.8V and 1µs (Typical)

0.5mA at 1.8V and 1µs (Typical)

Single Chip Enable (CE)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

Vcc = 1.2V

30ns OE access time

70 and 85ns

@ 1.65V

Speed

Current (I

Standby

N02L6181A

10 µA

Max

Publication Order Number:

3 mA @ 1MHz

Current (Icc),

Operating

Max

N02L6181A/D

Related parts for N02L6181AB27IT

Related keywords

N02L6181AB27IT datasheet
N02L6181AB27IT data sheet
N02L6181AB27IT pdf datasheet
N02L6181AB27IT component
N02L6181AB27IT part
N02L6181AB27IT distributor
N02L6181AB27IT RoHS
N02L6181AB27IT datasheet download