N02L6181AB27IT ONSEMI [ON Semiconductor], N02L6181AB27IT Datasheet - Page 3

• Manufacturer Part Number: N02L6181AB27IT
• Description: 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
• Manufacturer: ONSEMI [ON Semiconductor]

N02L6181A
Functional Block Diagram
Functional Description
1. When UB and LB are in select mode (low), I/O
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance
1. These parameters are verified in device characterization and are not 100% tested
CE
are affected as shown. When UB is in the select mode only I/O
isolated from any external influence and disabled from exerting any influence externally.
Address
Inputs
A
Address
Inputs
A
H
L
L
L
L
0
Input Capacitance
4
I/O Capacitance
- A
- A
CE
WE
OE
UB
LB
3
16
WE
Item
X
X
H
H
L
1
OE
X
H
Address
X
X
Address
L
Control
Decode
Decode
3
Page
Logic
Word
Logic
Logic
UB
L
L
L
H
X
1
1
1
Symbol
C
C
I/O
IN
LB
Rev. 4 | Page 3 of 11 | www.onsemi.com
L
L
L
X
H
1
1
1
0
8K Page
x 16 word
x 16 bit
RAM Array
- I/O
15
are affected as shown. When LB only is in the select mode only I/O
I/O
V
V
Data Out
Data In
IN
IN
High Z
High Z
High Z
0
- I/O
= 0V, f = 1 MHz, T
= 0V, f = 1 MHz, T
8
- I/O
Test Condition
15
1
15
are affected as shown.
A
A
= 25
= 25
Standby
Standby
MODE
Write
Active
Read
o
o
C
C
3
Buffers
Output
Input/
2
2
Mux
and
Min
Max
I/O
I/O
POWER
Standby
Standby
8
8
Active
Active
Active
0
8
- I/O
- I/O
Unit
pF
pF
0
15
7
- I/O
7