N02L6181AB27IT ONSEMI [ON Semiconductor], N02L6181AB27IT Datasheet - Page 6

• Manufacturer Part Number: N02L6181AB27IT
• Description: 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
• Manufacturer: ONSEMI [ON Semiconductor]

N02L6181A
Timing Test Conditions
Timing
Byte Select Disable to High-Z Output
Output Hold from Address Change
Output Disable to High-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Enable to Valid Output
Address Valid to End of Write
Chip Enable to Low-Z output
Byte Select to Low-Z Output
Chip Enable to Valid Output
Chip Enable to End of Write
Data to Write Time Overlap
Byte Select to Valid Output
Byte Select to End of Write
Data Hold from Write Time
End Write to Low-Z Output
Write to High-Z Output
Address Access Time
Write Recovery Time
Address Setup Time
Write Pulse Width
Read Cycle Time
Input and Output Timing Reference Levels
Write Cycle Time
Item
Input Rise and Fall Time
Operating Temperature
Power Supply Voltage
Input Pulse Level
Output Load
Item
Rev. 4 | Page 6 of 11 | www.onsemi.com
t
LBHZ
t
t
LBW
Symbol
LBZ
t
LB
t
t
t
t
t
t
t
t
t
t
t
t
WHZ
t
t
t
t
OHZ
t
t
t
OLZ
OW
WC
CW
AW
WP
WR
DW
RC
CO
OE
OH
DH
AA
HZ
, t
AS
, t
LZ
, t
, t
UB
UBZ
UBHZ
UBW
Min.
85
10
10
85
50
50
50
50
40
10
5
5
0
0
0
85ns
Max.
85
85
30
85
30
30
30
25
0.1V
-40 to +85
Min.
1.65 - 2.2V
70
10
10
70
40
40
40
40
40
10
CL = 30pF
5
5
0
0
0
CC
0.5 V
5ns
to 0.9 V
70ns
CC
o
Max.
C
70
70
25
70
25
25
25
20
CC
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns