MBM29F160BE-55 FUJITSU [Fujitsu Component Limited.], MBM29F160BE-55 Datasheet - Page 16

• Manufacturer Part Number: MBM29F160BE-55
• Description: 16M (2M X 8/1M X 16) BIT
• Manufacturer: FUJITSU [Fujitsu Component Limited.]

MBM29F160TE
SPA : Sector Address to be protected. Set sector address (SA) and (A
SD : Sector protection verify data. Output 01H at protected sector addresses and output 00H at unprotected sector
Notes: 1. This command is valid while fast mode.
Command Definitions
Read/Reset Command
Autoselect Command
Set to Fast Mode
Fast Program
(Note 1)
Reset from Fast
Mode (Note 1)
Query Command
(Note 2)
16
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them in an improper sequence will reset the device to the
read mode. Table 7 defines the valid register command sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while the Sector Erase operation is in progress. Moreover both
Read/Reset commands are functionally equivalent, resetting the device to the read mode. Please note that
commands are always written at DQ
The read or reset operation is initiated by writing the Read/Reset command sequence into the command register.
Microprocessor read cycles retrive array data from the memory. The devices remain enabled for reads until the
command register contents are altered.
The device will automatically power-up in the Read/Reset state. In this case, a command sequence is not
required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures
that no spurious alteration of the memory contents occurs during the power transition. Refer to the AC Read
Characteristics and Waveforms for specific timing parameters.
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufactures and device codes must be accessible while the device resides in the target system. PROM
programmers typically access the signature codes by raising A
voltage onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming
methodology. The operation is initiated by writing the Autoselect command sequence into the command register.
Following the last command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A
read cycle from address XX01H for 16 (XX02H for 8) retrieves the device code (MBM29F160TE = D2H and
Command
addresses.
Sequence
2. Addresses from system set to A
3. The data "00H" is also acceptable.
Word
Word
Word
Word
Byte
Byte
Byte
Byte
Table 8
Cycles
Req'd
Write
Bus
3
2
2
2
-55/-70/-90
MBM29F160TE/BE Extended Command Definitions
AAAH
XXXH
XXXH
XXXH
XXXH
555H
Addr
AAH
55H
Write Cycle
First Bus
0
to DQ
0
to A
Data
AAH
A0H
90H
98H
7
6
and DQ
. The other addresses are “Don’t Care”.
/MBM29F160BE
XXXH
XXXH
2AAH
Addr
555H
8
Second Bus
PA
Write Cycle
—
to DQ
15
(Note 3)
bits are ignored.
Data
55H
F0H
9
PD
—
to a high voltage. However, multiplexing high
6
, A
1
, A
AAAH
555H
Addr
Write Cycle
—
—
—
0
Third Bus
) = (0, 1, 0).
Data
20H
-55/-70/-90
—
—
—
Addr
—
—
Fourth Bus
Read Cycle
—
—
Data
—
—
—
—