MBM29F400BC-55PF SPANSION [SPANSION], MBM29F400BC-55PF Datasheet - Page 25

• Manufacturer Part Number: MBM29F400BC-55PF
• Description: FLASH MEMORY CMOS 4M (512K x 8/256K x 16) BIT
• Manufacturer: SPANSION [SPANSION]

24
MBM29F400TC
*1: Test Conditions:
Read Cycle Time
Address to Output Delay
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From Addresses,
CE or OE, Whichever Occurs First
RESET Pin Low to Read Mode
CE or BYTE Switching Low or High
AC CHARACTERISTICS
• Read Only Operations Characteristics
Output Load: 1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V or 3.0 V
Timing measurement reference level
Input: 1.5 V
Output: 1.5 V
Notes: C
Parameter
C
L
L
= 30 pF including jig capacitance (MBM29F400TC/BC-55)
= 100 pF including jig capacitance (MBM29F400TC/BC-70/90)
Device
Under
Test
-55/-70-90
JEDEC
C
t
t
t
t
t
L
t
t
GHQZ
AVAV
AVQV
ELQV
GLQV
EHQZ
AXQX
—
—
Symbol
Test Conditions
Standard
t
READY
t
t
t
ELFH
t
t
t
t
t
t
ELFL
ACC
RC
CE
OE
OH
DF
DF
Diode = 1N3064
or Equivalent
/MBM29F400BC
6.2 k
CE = V
OE = V
OE = V
Setup
Test
*2: Test Conditions:
—
—
—
—
—
—
—
Output Load: 1 TTL gate and 100 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.45 V or 2.4 V
Timing measurement reference level
IL
IL
IL
5.0 V
Input: 0.8 V and 2.0 V
Output: 0.8 V and 2.0 V
2.7 k
Min Max Min Max Min Max
55
0
-55 *
Diode = 1N3064
or Equivalent
1
55
55
30
15
15
20
5
70
0
-70 *
-55/-70-90
70
70
30
20
20
20
2
5
90
0
-90 *
90
90
35
20
20
20
2
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
s