S29PL-N SPANSION [SPANSION], S29PL-N Datasheet - Page 60

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S29PL-N

Manufacturer Part Number
S29PL-N
Description
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
Manufacturer
SPANSION [SPANSION]
Datasheet
58
Note:
/* Example: SecSi Sector Entry Command */
Note:
/* Once in the SecSi Sector mode, you program */
/* words using the programming algorithm.
Note:
/* Example: SecSi Sector Exit Command */
*((UINT16 *)base_addr + 0x555) = 0x00AA;
*((UINT16 *)base_addr + 0x2AA) = 0x0055;
*((UINT16 *)base_addr + 0x555) = 0x0088;
*((UINT16 *)base_addr + 0x555) = 0x00AA;
*((UINT16 *)base_addr + 0x2AA) = 0x0055;
*((UINT16 *)base_addr + 0x555) = 0x0090;
*((UINT16 *)base_addr + 0x000) = 0x0000;
Base = Base Address.
Base = Base Address.
Base = Base Address.
Program Setup
Unlock Cycle 1
Unlock Cycle 2
Unlock Cycle 1
Unlock Cycle 2
Unlock Cycle 1
Unlock Cycle 2
Entry Cycle
Program
Exit Cycle
Cycle
Cycle
Cycle
S29PL-N MirrorBit™ Flash Family
Table 10.3 Secured Silicon Sector Program
Table 10.2 Secured Silicon Sector Entry
Table 10.4 Secured Silicon Sector Exit
(LLD Function = lld_SecSiSectorEntryCmd)
(LLD Function = lld_SecSiSectorExitCmd)
Operation
(LLD Function = lld_ProgramCmd)
Write
Write
Write
Write
P r e l i m i n a r y
Operation
Operation
Write
Write
Write
Write
Write
Write
/* write unlock cycle 1
/* write unlock cycle 2
/* write Secsi Sector Entry Cmd
/* write unlock cycle 1
/* write unlock cycle 2
/* write SecSi Sector Exit cycle 3 */
/* write SecSi Sector Exit cycle 4 */
*/
Word Address
Word Address
Base + 555h
Base + 2AAh
Base + 555h
Word Address
Word Address
Base + 555h
Base + 2AAh
Base + 555h
Base + 555h
Base + 2AAh
Base + 555h
S29PL-N_00_A4 November 23, 2005
*/
*/
*/
*/
*/
Data Word
00AAh
00A0h
0055h
Data
00AAh
00AAh
0055h
0088h
0055h
0090h
Data
Data

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