M29W040-100K1R STMICROELECTRONICS [STMicroelectronics], M29W040-100K1R Datasheet - Page 2

• Manufacturer Part Number: M29W040-100K1R
• Description: 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M29W040
Figure 2A. LCC Pin Connections
Figure 2C. TSOP Reverse Pin Connections
2/31
DQ7
DQ6
DQ5
DQ4
DQ3
V SS
DQ2
DQ1
DQ0
A10
DQ0
A0
A1
A2
A3
G
E
A7
A6
A5
A4
A3
A2
A1
A0
9
1
8
9
16
M29W040
M29W040
(Reverse)
17
1
32
AI02077
32
25
24
17
25
AI02075
A14
A13
A8
A9
A11
G
A10
E
DQ7
A11
A9
A8
A13
A14
A17
W
V CC
A18
A16
A15
A12
A7
A6
A5
A4
Figure 2B. TSOP Pin Connections
DESCRIPTION
The M29W040 is a non-volatile memory that may
be erased electrically at the block level, and pro-
grammed Byte-by-Byte.
The interface is directly compatible with most mi-
croprocessors. PLCC32, TSOP32 (8 x 20mm)and
TSOP32 (8 x 14mm) packages are available. Both
normal and reverse pin outs are available for the
TSOP32 (8 x 20mm) package.
Organisation
The FlashMemory organisationis 512K x8 bits with
Address lines A0-A18 and Data Inputs/Outputs
DQ0-DQ7. Memory control is provided by Chip
Enable, Output Enable and Write Enable Inputs.
Erase and Program are performed through the
internal Program/Erase Controller (P/E.C.).
Data Outputs bits DQ7 and DQ6 provide polling or
toggle signals during Automatic Program or Erase
to indicate the Ready/Busy state of the internal
Program/Erase Controller.
Memory Blocks
Erasure of the memory is in blocks. There are 8
uniform blocks of 64 Kbytes each in the memory
address space. Each block can be programmed
and erased over 100,000 cycles. Each uniform
V CC
A11
A13
A14
A17
A18
A16
A15
A12
A9
A8
A7
A6
A5
A4
W
1
8
9
16
M29W040
(Normal)
AI02076
32
25
24
17
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
V SS
DQ2
DQ1
DQ0
A0
A1
A2
A3