CY8C20110_12 CYPRESS [Cypress Semiconductor], CY8C20110_12 Datasheet - Page 22

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CY8C20110_12

Manufacturer Part Number
CY8C20110_12
Description
Manufacturer
CYPRESS [Cypress Semiconductor]
Datasheet
Absolute Maximum Ratings
Operating Temperature
Document Number: 001-54606 Rev. *G
T
T
t
T
V
V
V
I
ESD
LU
T
T
BAKETIME
MIO
A
A
STG
BAKETEMP
J
DD
IO
IOZ
Parameter
Parameter
Storage temperature
Bake temperature
Bake time
Ambient temperature with power
applied
Supply voltage on V
V
DC input voltage
DC voltage applied to tristate
Maximum current into any GPIO
pin
Electro static discharge voltage
Latch-up current
Ambient temperature
Junction temperature
SS
Description
Description
DD
relative to
V
V
package
SS
SS
2000
label
–0.5
Min
See
Min
–40
–40
–55
–40
–25
– 0.5
– 0.5
Typ
125
Typ
25
V
V
Package
DD
DD
+100
+100
label
Max
+6.0
Max
See
+85
+50
200
+85
72
+ 0.5
+ 0.5
Hours
Unit
Unit
mA
mA
°C
°C
°C
°C
°C
CY8C20160, CY8C20140
CY8C20110, CY8C20180
V
V
V
V
Higher storage temperatures
reduce data retention time.
Recommended storage
temperature is +25 °C ± 25 °C (0 °C
to 50 °C). Extended duration
storage temperatures above 65 °C
degrade reliability
Human body model ESD
Notes
Notes
CY8C20142
Page 22 of 43

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