HYB39S256400T-10 SIEMENS [Siemens Semiconductor Group], HYB39S256400T-10 Datasheet - Page 33

• Manufacturer Part Number: HYB39S256400T-10
• Description: 256 MBit Synchronous DRAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

9. AC Parameters
9.1. AC Parameters for Write Timing
Semiconductor Group
CLK
CKE
CS
RAS
CAS
WE
BS
AP
Addr.
DQM
DQ
Hi-Z
t
CH
t
T0
CKS
t
t
AS
Command
T1
CL
Activate
Bank A
RAx
RAx
t
t
T2
t
CS
CH
AH
t
Auto Precharge
RCD
t
Command
Write with
T3
CK2
Bank A
Ax0
CAx
T4
Ax1
T5
Command
Activate
Bank B
t
Ax2
RBx
RBx
RC
T6
Ax3
Auto Precharge
Command
Write with
T7
Bank B
Bx0
CBx
Begin Auto
Precharge
Bank A
T8
Bx1
T9 T10
Command
Activate
Bank A
Bx2
RAy
RAy
33
t
DS
Bx3
T11
Command
Bank A
Ay0
Write
RAy
t
T12
Begin Auto
Precharge
Bank B
DH
Ay1
256 MBit Synchronous DRAM
T13
Ay2
T14 T15
HYB 39S256400/800/160T
Ay3
Precharge
Command
t
WR
Bank A
T16
t
RP
T17
Command
Activate
Burst Length = 4, CAS Latency = 2
Bank A
RAz
RAz
t
T18
CKH
t
RRD
T19 T20
Command
Activate
Bank B
RBy
RBy
1998-10-01
T21
SPT03910
T22