HYB39S256400T-10 SIEMENS [Siemens Semiconductor Group], HYB39S256400T-10 Datasheet - Page 54

• Manufacturer Part Number: HYB39S256400T-10
• Description: 256 MBit Synchronous DRAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

21. Full Page Write Cycle
21.1. CAS Latency = 2
Semiconductor Group
CLK
CKE
CS
RAS
CAS
WE
BS
AP
Addr.
DQM
DQ
High
Hi-Z
Command
Activate
Bank A
RAx
RAx
T0
t
Command
T1
CK2
Bank A
Write
DAx DAx 1 +
CAx
T2
Command
Command
T3
Activate
Activate
Bank B
Bank B
page address back to zero
during this time interval.
The burst counter wraps
from the highest order
DAx 2
RBx
RBx
+
T4
DAx
+3 DAx-
T5
1
T6
DAx DAx+1
T7
Command
Full Page burst operation does not
bursting beginning with the starting address.
terminate when the burst length is satisfied;
the burst counter increments and continues
T8
Bank B
Write
DBx
CBx
T9
DBx+1
T10
54
DBx 2
+
T11
DBx
3 + DBx+ DBx 5 +
T12
256 MBit Synchronous DRAM
ignored.
Data is
T13
4
T14
DBx
HYB 39S256400/800/160T
Burst Stop
Command
+6
T15 T16
Burst Length = Full Page, CAS Latency = 2
Bank B
T17
Precharge
Command
T18 T19
Command
Activate
Bank B
RBy
RBy
T20
1998-10-01
T21 T22
SPT03931