HYB39S256400T-10 SIEMENS [Siemens Semiconductor Group], HYB39S256400T-10 Datasheet - Page 36

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HYB39S256400T-10

Manufacturer Part Number
HYB39S256400T-10
Description
256 MBit Synchronous DRAM
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
11. Power on Sequence and Auto Refresh (CBR)
Semiconductor Group
CLK
CKE
CS
RAS
CAS
WE
BS
AP
Addr.
DQM
DQ
Hi-Z
stable for
Inputs must be
T0
200
is
High
Precharge
Command
T1
All Banks
required
s
Level
T2
t
1st Auto Refresh
RP
Command
T3
T4
T5
T6
Minimum of 8 Refresh Cycles are required
T7
T8
T9
8th Auto Refresh
36
T10
Command
T11
T12
256 MBit Synchronous DRAM
T13
t
RC
T14 T15
HYB 39S256400/800/160T
Mode Register
Set Command
Address Key
T16
2 Clock min.
T17
T18
Command
Any
T19
T20
1998-10-01
T21
SPT03913
T22

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