BD616LV4017AC-70 BSI [Brilliance Semiconductor], BD616LV4017AC-70 Datasheet - Page 7

• Manufacturer Part Number: BD616LV4017AC-70
• Description: Very Low Power/Voltage CMOS SRAM 256K X 16 bit
• Manufacturer: BSI [Brilliance Semiconductor]

R0201-BS616LV4017
NOTE :
PARAMETER
AC ELECTRICAL CHARACTERISTICS
WRITE CYCLE
1. t
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1
JEDEC
BW
NAME
t
t
t
t
t
t
t
t
t
t
t
t
E1LWH
WLWH
WHAX
BW
WLQZ
DVWH
WHDX
GHQZ
WHOX
AVAX
AVWL
AVWH
is 30ns/25ns (@speed=70ns/55ns) with address toggle. ; t
BSI
ADDRESS
OE
CE
LB,UB
WE
D
D
IN
OUT
PARAMETER
(1)
NAME
t
t
t
t
t
t
t
t
t
t
t
t
WC
CW
AS
AW
WP
WR
BW
WHZ
DW
DH
OHZ
OW
(1)
Write Cycle Time
Chip Select to End of Write
Address Setup Time
Address Valid to End of Write
Write Pulse Width
Write recovery Time
Date Byte Control to End of Write
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
t
(4,11)
DESCRIPTION
AS
t
OHZ
( TA = -40 to + 85
(5)
7
t
(CE,WE)
AW
BW
is 70ns/55ns (@speed=70ns/55ns) without address toggle.
(LB,UB)
o
C )
t
t
t
WC
CW
WP
t
(10)
BW
(2)
70
CYCLE TIME : 70ns
70
70
35
30
30
5
MIN. TYP. MAX.
0
0
--
0
--
(Vcc = 2.7~5.5V)
t
DW
--
--
--
--
--
--
--
--
--
--
--
--
30
30
--
--
--
--
--
--
--
--
--
--
t
t
WR
BS616LV4017
DH
(3)
(3)
CYCLE TIME : 55ns
55
55
55
30
25
25
MIN. TYP. MAX.
0
0
--
0
--
5
(Vcc = 3.0~5.5V)
--
--
--
--
--
--
--
--
--
--
--
--
25
25
--
--
--
--
--
--
--
--
--
--
Revision 2.1
Jan.
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2004