BH616UV1611_08 BSI [Brilliance Semiconductor], BH616UV1611_08 Datasheet - Page 5

• Manufacturer Part Number: BH616UV1611_08
• Description: Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit
• Manufacturer: BSI [Brilliance Semiconductor]

R0201-BH616UV1611
AC ELECTRICAL CHARACTERISTICS (T
READ CYCLE
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1
PARAMETER
JEDEC
NAME
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
E1LQV
E2LQV
E1LQX
E2LQX
E1HQZ
E2HQZ
GLQV
GLQX
BHQZ
GHQZ
AVQX
BLQV
BLQX
AVQX
AVAX
ADDRESS
D
OUT
PARANETER
NAME
(1,2,4)
t
t
t
t
t
t
t
t
t
ACS1
ACS2
CHZ1
CHZ2
t
t
t
t
CLZ1
CLZ2
t
t
BDO
OLZ
OHZ
RC
BA
OE
OH
AA
BE
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Select Access Time
Data Byte Control Access Time
Output Enable to Output Valid
Chip Select to Output Low Z
Chip Select to Output Low Z
Data Byte Control to Output Low Z
Output Enable to Output Low Z
Chip Deselect to Output High Z
Chip Deselect to Output High Z
Data Byte Control to Output High Z (LB, UB)
Output Disable to Output High Z
Data Hold from Address Change
DESCRIPTION
A
t
OH
= -40
O
C to +85
t
AA
5
(LB, UB)
(LB, UB)
(CE1)
(CE2)
(CE1)
(CE2)
(CE1)
(CE2)
O
t
C)
RC
CYCLE TIME : 55ns
MIN.
55
10
10
10
10
--
--
--
--
--
--
--
--
--
5
(Vcc=3.0V)
TYP.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
MAX.
55
55
55
55
30
25
25
25
25
--
--
--
--
--
--
BH616UV1611
CYCLE TIME : 70ns
MIN.
70
10
10
10
10
--
--
--
--
--
--
--
--
--
5
t
(Vcc=1.8V)
OH
TYP.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
MAX.
Revision
Oct.
70
70
70
70
35
35
35
35
30
--
--
--
--
--
--
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2008
1.1