BH616UV8010DI70 BSI [Brilliance Semiconductor], BH616UV8010DI70 Datasheet
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BH616UV8010DI70
Related parts for BH616UV8010DI70
BH616UV8010DI70 Summary of contents
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Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit Pb-Free and Green package materials are compliant to RoHS n FEATURES Ÿ Wide V low operation voltage : 1.65V ~ 3.6V CC Ÿ Ultra low power consumption : V = ...
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PIN DESCRIPTIONS Name A0-A18 Address Input CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input WE Write Enable Input OE Output Enable Input LB and UB Data Byte Control Input DQ0-DQ15 Data Input/Output Ports ...
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ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Terminal Voltage with V TERM Respect to GND Temperature Under T BIAS Bias T Storage Temperature STG P Power Dissipation Output Current OUT 1. Stresses greater than those listed under ABSOLUTE ...
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DATA RETENTION CHARACTERISTICS (T SYMBOL PARAMETER V V for Data Retention Data Retention Current CCDR Chip Deselect to Data t CDR Retention Time t Operation Recovery Time R 1. Typical characteristics are at T =25 A ...
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AC ELECTRICAL CHARACTERISTICS (T READ CYCLE JEDEC PARANETER PARAMETER NAME NAME t t Read Cycle Time AVAX Address Access Time AVQX AA Chip Select Access Time t t E1LQV ACS1 t t Chip Select Access Time ...
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READ CYCLE 2 CE1 CE2 D OUT (1, 4) READ CYCLE 3 ADDRESS OE CE1 CE2 LB OUT NOTES high in read Cycle. 2. Device is continuously selected when CE1 = V 3. Address ...
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AC ELECTRICAL CHARACTERISTICS (T WRITE CYCLE JEDEC PARANETER PARAMETER NAME NAME t t Write Cycle Time AVAX Address Set up Time AVWL Address Valid to End of Write AVWH Chip ...
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WRITE CYCLE 2 ADDRESS CE1 CE2 LB OUT D IN NOTES must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE1 and CE2 ...
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ORDERING INFORMATION BH616UV8010 Note: Brilliance Semiconductor Inc. (BSI) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application in which ...
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PACKAGE DIMENSIONS TSOP I-48 Pin (12mm x 20mm) R0201-BH616UV8010 BH616UV8010 10 Revision 1.2 May. 2006 ...
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Revision History Revision No. History 1.0 Initial Production Version 1.1 To improve access speed - from 70ns to 55ns 1.2 Change I-grade operation temperature range - from –25 O R0201-BH616UV8010 C to – BH616UV8010 Draft Date ...