BH616UV8011_08 BSI [Brilliance Semiconductor], BH616UV8011_08 Datasheet - Page 11

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BH616UV8011_08

Manufacturer Part Number
BH616UV8011_08
Description
Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
Manufacturer
BSI [Brilliance Semiconductor]
Datasheet
R0201-BH616UV8011
Revision History
Revision No.
1.0
1.1
1.2
History
Initial Production Version
Change I-grade operation temperature range
- from –25
Change -55 55ns(Max.) at V
55ns(Max.) at V
V
Typical value of standby current is replaced by
maximum value in Featues and Description
section
Remove “-: Normal” (Leaded) PKG Material in
ordering information
Add in TSOP1-48 package
CC
=1.8V
O
C to –40
CC
=3V, and 70ns(Max.) at
O
C
CC
=1.65~3.6V to
11
Draft Date
May 10,2006
May. 25, 2006
Oct. 31, 2008
BH616UV8011
Revision
Oct.
Remark
Initial
2008
1.2

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