TPS851_07 TOSHIBA [Toshiba Semiconductor], TPS851_07 Datasheet - Page 2

• Manufacturer Part Number: TPS851_07
• Description: Silicon Epitaxial Planar
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Electrical and Optical Characteristics
Supply voltage
Supply current
Light current (1)
Light current (2)
Light current (3)
Light current ratio
Dark current
Saturation output voltage
Peak sensitivity wavelength
Switching time
Note 2: CIE standard A light source is used (color temperature = 2856K, approximated incandescence light).
Note 3: Fluorescence light is used as light source. However, white LED is substituted in a mass-production process.
Note 4: Light current measurement circuit
Note 5: Rise time/fall time time measurement method
Pulse drive
Characteristics
White LED
I
L
(3) classification I
Rise time
Fall time
source
Light
L
TPS851
A: 37 μA to 62 μA
Symbol
TPS851
L I
L I
I
I
I
I
V
LEAK
L
L
L
I
V
λ p
CC
CC
t
t
(1)
(2)
(3)
(1)
O
r
(3)
f
V
CC
V
CC
V
R
V
V
V
V
V
V
I
(Ta = 25°C)
CC
CC
CC
CC
CC
CC
CC
L
L
R
= 1 kΩ
L
A
= 3 V, E
= 3 V, E
= 3 V, E
= 3 V, E
= 3.3 V, E
= 3 V, R
= 3 V, R
OUT
2
OUT
Test Condition
V
V
V
V
L
L
= 1000 lx
= 100 lx
= 10 lx
= 100 lx
V
= 150 k Ω , E
= 5 k Ω
= 0
⎯
⎯
⎯
GND
(Note 2), (Note 4)
(Note 3), (Note 4)
(Note 3), (Note 4)
V
OUT
I
1.5 V
F
V
= 100 lx
t
(Note 2)
(Note 3)
(Note 5)
r
Min
2.7
3.7
2.2
37
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
Typ.
2.35
0.07
620
600
f
1.2
0.4
⎯
62
⎯
⎯
⎯
90%
10%
2007-10-01
Max
0.17
5.5
7.4
1.7
74
⎯
⎯
⎯
⎯
1
2
TPS851
Unit
nm
μA
μA
μA
μA
μ A
ms
V
ς