MCF51JU128VHS FREESCALE [Freescale Semiconductor, Inc], MCF51JU128VHS Datasheet - Page 27

• Manufacturer Part Number: MCF51JU128VHS
• Description: MCF51JU128
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

Freescale Semiconductor, Inc.
t
t
t
t
t
t
t
t
t
t
t
t
t
t
eewr16b16k
eewr16b32k
eewr32b16k
eewr32b32k
pgmsec512
t
pgmpart32k
eewr16bers
eewr32bers
t
Symbol
t
t
eewr8b16k
eewr8b32k
eewr16b8k
eewr32b8k
setram32k
eewr8bers
pgmsec1k
eewr8b8k
pgmonce
setram8k
t
t
t
t
rdonce
t
vfykey
ersscr
rd1all
ersall
Erase Flash Sector execution time
Program Section execution time
Read 1s All Blocks execution time
Read Once execution time
Program Once execution time
Erase All Blocks execution time
Verify Backdoor Access Key execution time
Program Partition for EEPROM execution time
Set FlexRAM Function execution time:
Byte-write to erased FlexRAM location execution
time
Byte-write to FlexRAM execution time:
Word-write to erased FlexRAM location
execution time
Word-write to FlexRAM execution time:
Longword-write to erased FlexRAM location
execution time
Longword-write to FlexRAM execution time:
Description
• 512 B flash
• 1 KB flash
• 32 KB FlexNVM
• 8 KB EEPROM backup
• 32 KB EEPROM backup
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
Table 18. Flash command timing specifications (continued)
MCF51JU128 Advance Information Data Sheet, Rev. 1, 08/2011.
Longword-write to FlexRAM for EEPROM operation
Word-write to FlexRAM for EEPROM operation
Byte-write to FlexRAM for EEPROM operation
Preliminary
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Typ.
100
100
100
200
20
50
25
—
—
—
Memories and memory interfaces
Max.
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
100
500
1.8
1.5
1.5
2.7
35
35
Unit
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
μs
μs
μs
μs
μs
μs
Notes
2
1
2
1
3
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