MCF51JU128VHS FREESCALE [Freescale Semiconductor, Inc], MCF51JU128VHS Datasheet - Page 28

• Manufacturer Part Number: MCF51JU128VHS
• Description: MCF51JU128
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

Memories and memory interfaces
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash (FTFL) current and power specfications
6.4.1.4 Reliability specifications
1. Typical data retention values are based on intrinsic capability of the technology measured at high temperature derated to
2. Data retention is based on T
3. Cycling endurance represents number of program/erase cycles at -40°C ≤ T
28
n
n
t
n
n
n
t
t
t
t
t
nvmretee100
t
t
t
nvmwree128
nvmwree512
nvmretp10k
nvmretp100
nvmretd10k
nvmretd100
nvmretee10
n
n
Symbol
nvmwree16
nvmretp1k
nvmretd1k
nvmretee1
nvmwree4k
nvmwree8k
nvmcycp
nvmcycd
25°C. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin
EB618.
I
Symbol
DD_PGM
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Data retention after up to 100 cycles
Cycling endurance
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Data retention after up to 100 cycles
Cycling endurance
Data retention up to 100% of write endurance
Data retention up to 10% of write endurance
Data retention up to 1% of write endurance
Write endurance
Description
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
• EEPROM backup to FlexRAM ratio = 8192
Worst case programming current in program flash
Description
Table 19. Flash (FTFL) current and power specfications
MCF51JU128 Advance Information Data Sheet, Rev. 1, 08/2011.
javg
Table 20. NVM reliability specifications
= 55°C (temperature profile over the lifetime of the application).
FlexRAM as EEPROM
Program Flash
Preliminary
Data Flash
1.27 M
315 K
10 M
20 M
10 K
10 K
35 K
Min.
10
15
10
15
10
15
5
5
5
Typ.
j
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
≤ 125°C.
1
Max.
Typ.
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Freescale Semiconductor, Inc.
cycles
cycles
writes
writes
writes
writes
writes
years
years
years
years
years
years
years
years
years
Unit
Unit
mA
Notes
2
2
2
3
2
2
2
3
2
2
2
4