BSZ160N10NS3G INFINEON [Infineon Technologies AG], BSZ160N10NS3G Datasheet - Page 3
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BSZ160N10NS3G
Manufacturer Part Number
BSZ160N10NS3G
Description
OptiMOS3 Power-Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSZ160N10NS3G
Manufacturer:
LIS
Quantity:
30 000
Part Number:
BSZ160N10NS3G
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
BSZ160N10NS3GATMA1
Manufacturer:
INFINEON
Quantity:
3 000
Rev. 1.2
5)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
See figure 16 for gate charge parameter definition
5)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
Q
V
Q
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
g(th)
gd
sw
g
oss
rr
V
f =1 MHz
V
I
V
V
V
T
V
T
D
page 3
C
j
GS
DD
DD
GS
DD
GS
=10 A, R
=25 °C
V
=25 °C
di
=0 V, V
=50 V, V
=50 V, I
=0 to 10 V
=40 V, V
=0 V, I
R
=50 V, I
F
/dt =100 A/µs
F
G
DS
=20 A,
D
=1.6 Ω
GS
GS
=10 A,
F
=50 V,
=10A ,
=10 V,
=0 V
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1300
13.0
10.0
22.0
typ.
240
5.0
5.7
3.8
3.4
5.3
4.2
0.9
11
19
25
73
52
-
-
BSZ160N10NS3 G
max.
1700
320
160
1.2
25
33
40
-
-
-
-
-
-
-
-
-
-
-
-
Unit
pF
ns
nC
V
nC
A
V
ns
nC
2009-11-12