BSZ160N10NS3G INFINEON [Infineon Technologies AG], BSZ160N10NS3G Datasheet - Page 7

• Manufacturer Part Number: BSZ160N10NS3G
• Description: OptiMOS3 Power-Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

Rev. 1.2
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
110
105
100
10
95
90
AV
1
0.1
-60
=f(T
); R
j
GS
); I
j(start)
=25 Ω
-20
D
=1 mA
1
20
125 °C
t
T
AV
j
10
60
[°C]
[µs]
100 °C
100
100
25 °C
140
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
12
10
V
8
6
4
2
0
V
g(th)
g s(th)
0
GS
gate
); I
DD
Q
D
=10 A pulsed
g s
5
Q
Q
gate
g
10
Q
[nC]
sw
Q
BSZ160N10NS3 G
g d
15
20 V
80 V
Q
50 V
g ate
2009-11-12
20