BSZ160N10NS3G INFINEON [Infineon Technologies AG], BSZ160N10NS3G Datasheet - Page 4

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BSZ160N10NS3G

Manufacturer Part Number
BSZ160N10NS3G
Description
OptiMOS3 Power-Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheets

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Rev. 1.2
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
80
70
60
50
40
30
20
10
10
10
10
10
10
0
DS
-1
3
2
1
0
0
C
10
); T
)
-1
C
p
limited by on-state
resistance
25
=25 °C; D =0
10
50
DC
0
75
T
V
C
DS
10
[°C]
1
[V]
100
10 µs
10 ms
1 ms
100 µs
125
1 µs
10
2
150
175
10
page 4
3
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
0.01
=f(t
50
45
40
35
30
25
20
15
10
0.1
5
0
10
C
1
); V
0
10
p
)
0.02
0
0.05
0.01
-6
0.1
single pulse
0.5
0.2
GS
25
≥10 V
10
p
0
/T
-5
50
10
0
-4
75
T
C
t
10
p
[°C]
0
[s]
-3
100
BSZ160N10NS3 G
10
125
0
-2
10
150
0
-1
2009-11-12
175
10
1
0

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