M24L216128DA-55BEG ESMT [Elite Semiconductor Memory Technology Inc.], M24L216128DA-55BEG Datasheet - Page 5

• Manufacturer Part Number: M24L216128DA-55BEG
• Description: 2-Mbit (128K x 16) Pseudo Static RAM
• Manufacturer: ESMT [Elite Semiconductor Memory Technology Inc.]

ESMT
AC Test Loads and Waveforms
Switching Characteristics Over the Operating Range[10]
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
t
t
Write Cycle[12]
t
t
t
t
t
Notes:
10. Test conditions assume signal transition time of 1 V/ns or higher, timing reference levels of V
11. t
12. High-Z and Low-Z parameters are characterized and are not 100% tested.
13. The internal write time of the memory is defined by the overlap of WE ,
14. To achieve 55-ns performance, the read access should be Chip-enable controlled. In this case t
Elite Semiconductor Memory Technology Inc.
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
DBE
LZBE
HZBE
SK
WC
SCE
AW
HA
SA
[14]
Parameter
to V
All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data
input set-up and hold timing should be referenced to the edge of the signal that terminates write.
and t
be stable within 10 ns after the start of the read cycle.
HZOE
CC(typ)
, t
SK
HZCE
is satisfied when the addresses are stable prior to chip enable going active. For the 70-ns cycle, the addresses must
, and output loading of the specified I
Parameters
, t
HZBE
R
V
R1
R2
TH
TH
, and t
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
Address Skew
Write Cycle Time
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
CE
OE LOW to Data Valid
OE LOW to LOW Z[11, 12]
OE HIGH to High Z[11, 12]
CE
CE
BLE / BHE LOW to Data Valid
BLE / BHE LOW to Low Z[11, 12]
BLE / BHE HIGH to High Z[11, 12]
CE
1
1
1
1
HZWE
LOW and CE2 HIGH to Data Valid
LOW and CE2 HIGH to Low Z[11, 12]
HIGH and CE2 LOW to High Z[11, 12]
LOW and CE2 HIGH to Write End
transitions are measured when the outputs enter a high-impedance state.
Description
OL
/I
OH
and 30-pF load capacitance.
3.0V V
22000
22000
11000
1.50
CC
55[14]
CE
Min.
55
45
45
5
5
2
5
0
0
1
-55 [14]
= V
IL
, CE2 = V
Max.
Revision : 1.2
Publication Date : Jul. 2008
55
55
25
25
25
55
10
0
M24L216128DA
CC(typ)
IH
, BHE and/or BLE = V
ACE
Min.
/2, input pulse levels of 0V
70
10
70
55
55
5
5
5
0
0
Unit
is the critical parameter
Ω
Ω
Ω
V
-70
Max.
70
70
35
25
25
70
25
10
5/14
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
IL
.