M52S16161A-10BG ESMT [Elite Semiconductor Memory Technology Inc.], M52S16161A-10BG Datasheet - Page 18
M52S16161A-10BG
Manufacturer Part Number
M52S16161A-10BG
Description
512K x 16Bit x 2Banks Synchronous DRAM
Manufacturer
ESMT [Elite Semiconductor Memory Technology Inc.]
Datasheet
1.M52S16161A-10BG.pdf
(29 pages)
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ESMT
M52S16161A
Read & Write Cycle at Different Bank @ Burst Length = 4
*Note: 1.t
should be met to complete write.
CDL
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2007
Revision : 1.5
18/29
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