M52S16161A-10BG ESMT [Elite Semiconductor Memory Technology Inc.], M52S16161A-10BG Datasheet - Page 4

• Manufacturer Part Number: M52S16161A-10BG
• Description: 512K x 16Bit x 2Banks Synchronous DRAM
• Manufacturer: ESMT [Elite Semiconductor Memory Technology Inc.]

ESMT
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Note: 1.Measured with outputs open. Addresses are changed only one time during t
Elite Semiconductor Memory Technology Inc.
Operating Current
(One Bank Active)
Precharge Standby
Current in power-down
mode
Precharge Standby
Current in non
power-down mode
Active Standby Current
in power-down mode
Active Standby Current
Operating Current
(Burst Mode)
Self Refresh Current
Deep Power Down
Current
in non power-down
mode
(One Bank Active)
Refresh Current
2.Refresh period is 32ms. Addresses are changed only one time during t
Parameter
Symbol
I
I
I
I
I
I
I
I
I
I
I
I
I
CC1
CC2P
CC2PS
CC2N
CC2NS
CC3P
CC3PS
CC3N
CC3NS
CC4
CC5
CC7
CC6
Burst Length = 1
t
CKE
CKE
CKE
Input signals are changed one time during 30ns
CKE
Input signals are stable
CKE
CKE
CKE
Input signals are changed one time during 30ns
CKE
Input signals are stable
I
All Band Activated, tCCD = tCCD (min)
t
CKE
CKE
RC
OL
RC
= 0Ma, Page Burst
≥
≥
≤
≤
≥
≥
≤
≥
≥
t
≤
≤
RC
t
≤
RC
V
V
V
V
V
V
V
0.2V
0.2V
(min)
IL
IL
IH
IH
IL
IH
IH
V
(min), t
(max), t
(max), CLK
(max), t
(min), CS
(min), CLK
(min), CS
Test Condition
(min), CLK
IL
(max), CLK
CC
CC
CC
≥
=15ns
=15ns
≤
≥
≥
≤
≤
t
CC
V
V
V
V
A
≤
V
IL
IH
IL
IL
= 0
(min), I
(max), t
IH
(max), t
(min), t
(max), t
V
(min), t
IL
°
(max), t
C
~ 70
TCSR range
1/2 Bank
1/4 Bank
OL
CC
CC
CC
CC
CC
= 0mA
2 Banks
1 Bank
=15ns
=
=
=15ns
=
CC
°
∞
C
∞
∞
Latency
=
CC
)
CAS
(min).
∞
CC
(min).
Revision : 1.5
Publication Date : May. 2007
120
100
110
90
45
45
45
70
-8
M52S16161A
Version
0.2
15
10
-
-
-
-
-
-
100
-10
35
35
35
45
95
90
85
4/29
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
°
uA
uA
C
1
2
1