M52S16161A-10TG ESMT [Elite Semiconductor Memory Technology Inc.], M52S16161A-10TG Datasheet - Page 15
M52S16161A-10TG
Manufacturer Part Number
M52S16161A-10TG
Description
512K x 16Bit x 2Banks Mobile Synchronous DRAM
Manufacturer
ESMT [Elite Semiconductor Memory Technology Inc.]
Datasheet
1.M52S16161A-10TG.pdf
(32 pages)
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ESMT
Page Read & Write Cycle at Same Bank @ Burst Length=4
DQ
*Note: 1. To write data before burst read ends, DQM should be asserted three cycle prior to write command to avoid bus
Elite Semiconductor Memory Technology Inc.
CLOCK
A10/AP
CL=3
CL=2
ADDR
DQM
CKE
RAS
CAS
WE
CS
BA
2. Row precharge will interrupt writing. Last data input, t
3. DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst.
contention.
Input data after Row precharge cycle will be masked internally.
0
Row Active
(A-Bank)
Ra
Ra
1
2
t
RCD
3
(A-Bank)
Read
Ca0
4
5
(A-Bank)
Cb0
Read
Qa0
6
Qa1
Qa0
7
Qb0
Qa1
8
*Note1
Qb1
Qb0
RDL
9
before Row precharge, will be written.
Qb1
Qb2
HIGH
10
11
(A-Bank)
Write
Dc0
Cc0
Dc0
12
t
CDL
Dc1
Dc1
13
(A-Bank)
Write
Cd0
Dd0
Dd0
Revision : 1.6
Publication Date : May 2009
14
M52S16161A
Dd1
Dd2
15
t
RDL
16
Precharge
(A-Bank)
*Note3
*Note2
17
18
15/32
: Don't care
19
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