M52S16161A-10TG ESMT [Elite Semiconductor Memory Technology Inc.], M52S16161A-10TG Datasheet - Page 7

• Manufacturer Part Number: M52S16161A-10TG
• Description: 512K x 16Bit x 2Banks Mobile Synchronous DRAM
• Manufacturer: ESMT [Elite Semiconductor Memory Technology Inc.]

ESMT
Mode Register
Mode Register Write Timing
Elite Semiconductor Memory Technology Inc.
BA
x
0
A10
x
0
A9
0
1
A8
0
0
A7
0
0
A0-A10; BA
A6
CLOCK
LTMODE
LTMODE
CAS
CKE
RAS
A5
WE
CS
A4
WT
WT
A3
A2
BL
BL
A1 A0
Latency mode
Wrap type
Burst length
Burst Read and Single Write (for Write
Through Cache)
Mode Register Set
Address bus
Mode Register Write
Revision : 1.6
Publication Date : May 2009
A2-A0
A6-A4
000
001
010
011
100
101
110
0
1
000
001
010
011
100
101
110
111
111
M52S16161A
Remark R : Reserved
x =Don’t care
Full page
Sequential
Interleave
WT=0
R
R
R
1
2
4
8
CAS Latency
R
R
R
R
R
R
2
3
7/32
WT=1
R
R
R
R
1
2
4
8