M52S16161A-10TG ESMT [Elite Semiconductor Memory Technology Inc.], M52S16161A-10TG Datasheet - Page 18
M52S16161A-10TG
Manufacturer Part Number
M52S16161A-10TG
Description
512K x 16Bit x 2Banks Mobile Synchronous DRAM
Manufacturer
ESMT [Elite Semiconductor Memory Technology Inc.]
Datasheet
1.M52S16161A-10TG.pdf
(32 pages)
ESMT
M52S16161A
Read & Write Cycle at Different Bank @ Burst Length = 4
*Note: 1. t
should be met to complete write.
CDL
Elite Semiconductor Memory Technology Inc.
Publication Date : May 2009
Revision : 1.6
18/32
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